(China (Mainland))
Product Summary
TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH)technology with high radiant power and high speed, molded in a clear, untinted plastic package. The TSHG8400 applications are (1)Infrared radiation source for operation with CMOS cameras (illumination); (2)High speed IR data transmission.
Parametrics
TSHG8400 absolute maximum ratings: (1)Reverse voltage VR: 5 V; (2)Forward current IF: 100 mA; (3)Peak forward current tp/T = 0.5, tp = 100 μs IFM: 200 mA; (4)Surge forward current tp = 100 μs IFSM: 1 A; (5)Power dissipation PV: 180 mW; (6)Junction temperature Tj: 100 ℃.
Features
TSHG8400 features: (1)High reliability; (2)High radiant power; (3)High radiant intensity; (4)Low forward voltage; (5)Suitable for high pulse current operation; (6)High modulation bandwidth: fc = 18 MHz; (7)Good spectral matching with CMOS cameras.
Diagrams
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 TSHG8400 |
Vishay Semiconductors |
Infrared Emitters High Speed Emitter 5V 50mW 830nm 22 Deg |
Data Sheet |
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TSHG5210 |
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Infrared Emitters High Speed Emitter 5V 55mW 850nm 18 Deg |
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TSHG5410 |
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Infrared Emitters High Speed Emitter 5V 55mW 850nm 18 Deg |
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TSHG5510 |
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Infrared Emitters High Speed Emitter 5V 180mW 830nm 38Deg |
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Infrared Emitters High Speed Emitter 5V 50mW 850nm 10 Deg |
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TSHG6210 |
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Infrared Emitters High Speed Emitter 5V 55mW 850nm 10 Deg |
Data Sheet |
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TSHG6400 |
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Infrared Emitters High Speed Emitter 5V 50mW 850nm 22 Deg |
Data Sheet |
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