(China (Mainland))
Product Summary
The STP4NA80 is an n-channel enhancement mode fast power mos transistor. This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. Its applications include high current, high speed switching, switch mode power supplies, DC-AC converters for welding equipment and uninterruptible power supplies and motor drive.
Parametrics
STP4NA80 absolute maximum ratings: (1)drain-source voltage: 800V; (2)Drain-gate voltage: 800V; (3)Gate-source voltage: ±30V; (4)drain current at TC=25℃: 2.5A; (5)Drain current at TC=100℃: 1.6A; (6)drain current: 16A; (7)insulation withstand voltage: 2000V.
Features
STP4NA80 features: (1)repetitive avalanche data at 100℃; (2)low intrinsic capacitances; (3)gate gharge minimized; (4)reduced threshold voltage spread; (5)typical RDS=2.4Ω.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 STP4NA80 |
STMicroelectronics |
MOSFET RO 511-STP4NB80 TO-220 N-CH 800V 4A |
Data Sheet |
Negotiable |
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STP4NA80FI |
Other |
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Data Sheet |
Negotiable |
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