(China (Mainland))
Product Summary
The IRFP260N is a power MOSFET. Its package is TO-247AC. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Parametrics
Absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 50A max; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 35A max; (3)IDM Pulsed Drain Current: 200A max; (4)PD @TC = 25℃ Power Dissipation: 300 W max; (5)Linear Derating Factor: 2.0 W/℃ max; (6)VGS Gate-to-Source Voltage: ±20 V max; (7)EAS Single Pulse Avalanche Energy: 560 mJ max; (8)EAR Repetitive Avalanche Energy: 30 mJ max; (9)dv/dt Peak Diode Recovery dv/dt:10 V/ns max; (10)TJ Operating Junction and -55 to +175℃ max.
Features
Features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175°C Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201271714455927.jpg">
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRFP260N |
International Rectifier |
MOSFET N-CH 200V 50A TO-247AC |
Data Sheet |
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IRFP260NPBF |
International Rectifier |
MOSFET MOSFT 200V 49A 40mOhm 156nCAC |
Data Sheet |
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