Product Summary
The IRF9540N is a power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF9540N absolute maximum ratings: (1)continuous drain current: -23A; (2)continuous drain current @TC=100℃: -16A; (3)pulsed drain current: -76A; (4)power dissipation: 140W; (5)linera derating factor: 0.91W/℃; (6)single pulse avalanche energy: 430mJ; (7)avalanche current: -11A; (8)repetitive avalanche energy: 14mJ.
Features
IRF9540N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175°C Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF9540N |
International Rectifier |
MOSFET P-CH 100V 23A TO-220AB |
Data Sheet |
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IRF9540NL |
MOSFET P-CH 100V 23A TO-262 |
Data Sheet |
Negotiable |
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IRF9540NPBF |
International Rectifier |
MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC |
Data Sheet |
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IRF9540NLPBF |
International Rectifier |
MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC |
Data Sheet |
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IRF9540NSPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF9540NS |
Other |
Data Sheet |
Negotiable |
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IRF9540NSTRLPBF |
International Rectifier |
MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC |
Data Sheet |
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IRF9540NSTRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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