(China (Mainland))
Product Summary
The IRFPS37N50A is a Power MOSFET. The device is suitable for Switch Mode Power Supply (SMPS), Uninterruptable Power Supply, High Speed Power Switching and Lead-Free.
Parametrics
IRFPS37N50A absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 36A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 23 A; (3)IDM, Pulsed Drain Current: 144A; (4)PD @TC = 25℃, Power Dissipation: 446 W; (5)Linear Derating Factor: 3.6 W/℃; (6)VGS, Gate-to-Source Voltage: ± 30 V; (7)dv/dt, Peak Diode Recovery dv/dt: 3.5 V/ns; (8)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 150℃; (9)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case ).
Features
IRFPS37N50A features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Effective Coss Specified.
Diagrams
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 IRFPS37N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 36 Amp |
Data Sheet |
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IRFPS37N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 36 Amp |
Data Sheet |
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