Product Summary
The IRF1010EPBF is a HEXFET power MOSFET. It is from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF1010EPBF absolute maximum ratings: (1)continuous drain current: 84A; (2)continuous drain current, @TC=100℃: 59A; (3)pulsed drain current: 330A; (4)power dissipation: 200W; (5)linear derating factor: 1.4W/℃; (6)gate-to-source voltage: ±20V; (7)avalanche current: 50A; (8)Operating junction storage temperature range: -55 to 175℃.
Features
IRF1010EPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175°C Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF1010EPBF |
International Rectifier |
MOSFET MOSFT 60V 81A 12mOhm 86.6nC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF1010EPBF |
International Rectifier |
MOSFET MOSFT 60V 81A 12mOhm 86.6nC |
Data Sheet |
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IRF1010EZSTRLP |
International Rectifier |
MOSFET MOSFT 60V 84A 8.5mOhm 58nC |
Data Sheet |
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IRF1404ZGPBF |
International Rectifier |
MOSFET MOSFT 40V 190A 3.7mOhm 100nC |
Data Sheet |
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IRF1404STRLPBF |
International Rectifier |
MOSFET MOSFT 40V 162A 4mOhm 160nC |
Data Sheet |
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IRF1405ZS-7PPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF1404 |
International Rectifier |
MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB |
Data Sheet |
Negotiable |
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