Product Summary
The DDB6U134N16RR is an IGBT-module.
Parametrics
DDB6U134N16RR absolute maximum ratings: (1)repetitive peak reverse voltage: 800V; (2)forward current RMS maximum per diode: 30A; (3)maximum RMS current at rectifier output: 30A; (4)surge forward current: 310A; (5)I2t-value: 480A2s.
Features
DDB6U134N16RR features: (1)insulation test voltage: 2.5kV; (2)creepage distance: 5mm; (3)chip module lead resistance, terminal-chip: 800mΩ; (4)storage temperature: -40 to 125℃; (5)mountig force per clamp: 50N; (6)weight: 10g.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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DDB6U134N16RR |
Infineon Technologies |
Rectifiers 1600V 134A UN-CNTL |
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DDB6U100N12RR |
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Discrete Semiconductor Modules 1200V 100A UN-CNTL |
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DDB6U100N16R |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 100A UN-CNTL |
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DDB6U100N16RR |
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