Product Summary

The TIC106D is a silicon controlled rectifier.

Parametrics

TIC106D absolute maximum ratings: (1)Continuous on-state current at (or below) 80℃ case temperature: 5 A; (2)Average on-state current (180° conduction angle) at (or below) 80℃ case temperature: 3.2 A; (3)Surge on-state current: 30 A; (4)Peak positive gate current: 0.2 A; (5)Peak gate power dissipation: 1.3 W; (6)Average gate power dissipation: 0.3 W; (7)Operating case temperature range: -40 to +110℃; (8)Storage temperature range: -40 to +125℃; (9)Lead temperature 1.6 mm from case for 10 seconds: 230℃.

Features

TIC106D features: (1)5 A Continuous On-State Current; (2)30 A Surge-Current; (3)Glass Passivated Wafer; (4)400 V to 800 V Off-State Voltage; (5)Max IGT of 200 uA.

Diagrams

TIC106D block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TIC106D
TIC106D

Other


Data Sheet

Negotiable 
TIC106D-S
TIC106D-S

Bourns

SCRs 400V 5A SCR

Data Sheet

0-15000: $0.37
15000-20000: $0.37