(China (Mainland))
Product Summary
The SI3457BDV-T1-E3 is a p-channel MOSFET.
Parametrics
SI3457BDV-T1-E3 absolute maximum ratings: (1)drain-source voltage: -30V; (2)gate-source voltage: ±20V; (3)continuous drain current: -3.7A; (4)pulsed drain current: -20A; (5)continuous source current: -0.95A; (6)maximum power dissipation: 1.14W; (7)operating junction and storage temperature range: -55 to 150℃.
Features
SI3457BDV-T1-E3 features: (1)halogen-free according to IEC 61249-2-21 available; (2)trenchFET power MOSFETs.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SI3457BDV-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 4.3A 2W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Data Sheet |
Negotiable |
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