Product Summary

The BSM200GA120DN2SE3256 is an IGBT Power Module.

Parametrics

BSM200GA120DN2SE3256 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, TC = 25℃, IC: 200A; TC = 80℃, IC: 300A; (5)Pulsed collector current, tp = 1 ms, TC = 25℃, ICpuls: 400A; TC = 80℃, ICpuls: 600A; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 1550W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃.

Features

BSM200GA120DN2SE3256 features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM200GA120DN2SE3256 block diagram

BSM200GA120D
BSM200GA120D
Other

Data Sheet
Negotiable 
BSM200GA120DLC
BSM200GA120DLC
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-6: $74.68
6-10: $67.21
BSM200GA120DLCS
BSM200GA120DLCS
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-6: $74.68
6-10: $67.21
BSM200GA120DN2
BSM200GA120DN2
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-1: $71.06
1-10: $63.95
BSM200GA120DN2C
BSM200GA120DN2C
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2F
BSM200GA120DN2F
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40