Product Summary

The K4T1G164QE-HCE7 is a 1Gb E-die DDR2 SDRAM. It is designed specifically for use in consumer electronic devices, such as digital TVs, DVD players/recorders, set-top boxes, digital still and video cameras, hard disk drives, printers, storage and networking equipment, automotive appliances, and many others. DRAM is the de-facto memory deployed in virtually all high-end digital consumer and industrial applications in use today, with different versions of consumer DRAM, such as SDRAM, DDR DRAM, DDR2 DRAM, and DDR3 DRAM, being utilized in such applications.

Parametrics

K4T1G164QE-HCE7 absolute maximum ratings: (1)voltage on VDD pin relative to VSS: -1 to 2.3V; (2)Voltage on VDDQ pin relative to VSS: -0.5 to 2.3V; (3)voltage on VDDL pin relative to VSS: -0.5 to 2.3V; (4)voltage on any pin relative to VSS: -0.5 to 2.3V; (5)storage temperature: -55 to 100℃.

Features

K4T1G164QE-HCE7 features: (1)JEDEC standard VDD=1.8V±0.1V power supply; (2)VDDQ=1.8±0.1V; (3)333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)8 banks; (5)posted CAS; (6)programmable CAS latency: 3, 4, 5, 6; (7)write latency=read latency; (8)burst length: 4, 8.

Diagrams

K4T1G164QE-HCE7 diagram

K4T1G044QM-ZCD5
K4T1G044QM-ZCD5

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Data Sheet

Negotiable 
K4T1G044QM-ZCCC
K4T1G044QM-ZCCC

Other


Data Sheet

Negotiable 
K4T1G044QA
K4T1G044QA

Other


Data Sheet

Negotiable