Product Summary
The BSM75GD120DN2 is an IGBT power module.
Parametrics
BSM75GD120DN2 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)Collector-gate voltage: 1200V; (3)Gate-emitter voltage: ±20V; (4)DC collector current: 103A; (5)Pulsed collector current: 206A; (6)Power dissipation per IGBT: 520W.
Features
BSM75GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM75GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 75A 3-PHASE |
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Infineon Technologies |
IGBT Modules 1200V 75A CHOPPER |
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BSM75GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 75A DUAL |
Data Sheet |
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BSM75GB120DN2_E3223c-Se |
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