(China (Mainland))
Product Summary
The NDS355N is an N-channel logic level enhancement mode field effect transistor. These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The NDS355N is particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Parametrics
NDS355N absolute maximum ratings: (1)drain-source voltage: 30V; (2)Gate-source voltage-continuous: 20V; (3)drain current-continuous: ±1.6A; (4)maximum power dissipation: 0.5W; (5)Operating and storage temperature range: -55 to 150℃.
Features
NDS355N features: (1)Proprietary package design using copper lead frame for superior thermal and electrical capabilities; (2)High density cell design for extremely low RDS(ON); (3)Exceptional on-resistance and maximum DC current capability; (4)Compact industry standard SOT-23 surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 NDS355N |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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 |
NDS355N_D87Z |
Fairchild Semiconductor |
MOSFET N-Channel FET LL Enhancement |
Data Sheet |
Negotiable |
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