Product Summary
The IRF840PBF is a power MOSFET. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The IRF840PBF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRF840PBF contribute to its wide acceptance throughout the industry.
Parametrics
IRF840PBF absolute maximum ratings: (1)drain-source voltage: 500V; (2)Gate-source voltage: ±20V; (3)continuous drain current: 8A; (4)pulsed drain current: 32A; (5)linear derating factor: 1W/℃; (6)single pulse avalanche energy: 510mJ; (7)maximum power dissipation: 125W; (8)operating junction and storage temperature range: -55 to 150℃; (9)soldering recommendations: 300℃.
Features
IRF840PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Compliant to RoHS Directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF840PBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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IRF8010 |
Other |
Data Sheet |
Negotiable |
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IRF8010LPBF |
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Data Sheet |
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IRF8010PBF |
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IRF8010S |
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Data Sheet |
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IRF8010SPBF |
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IRF8010STRLPBF |
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Data Sheet |
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