(China (Mainland))
Product Summary
The BSM100GT120DN2 is an IGBT power module.
Parametrics
BSM100GT120DN2 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)collector-gate voltage: 1200V; (3)gate-emitter voltage: ±20V; (4)DC collector current: 150A; (5)pulsed collector current: 300A; (6)power dissipation per IGBT: 680W; (7)Storage temperature: -55 to 150℃.
Features
BSM100GT120DN2 features: (1)Three single switches; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)Solderable Terminals.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM100GT120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A TRIPACK |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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