Product Summary
The IRF540NPBF is a HEXFET power MOSFET. Advanced HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that the IRF540NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF540NPBF absolute maximum ratings: (1)ID@T=25℃ Continuous Drain Current, VGS@10V: MAX=33A; (2)ID@T=100℃ Continuous Drain Current, VGS@10V: MAX=23A; (3)IDM Pulsed Drain Current: MAX=72A; (4)PD@T=25℃ Power Dissipation: 110W; (5)Linear Derating Factor: 0.87W/℃; (6)VGS Gate-to-Source Voltage: ±20V; (7)IAR Avalanche Current: 16A; (8)EAR Repetitive Avalanche Energy: 13mJ; (9)dv/dt Peak Diode Recovery dv/dt: 7.0V/ns; (10)Soldering Temperature, for 10 seconds: 300℃(1.6mm from case ); (11)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m).
Features
IRF540NPBF features: (1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175℃ operating temperature; (5)fast switching; (6)fully avalanche rated; (7)lead-free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF540NPBF |
International Rectifier |
MOSFET MOSFT 100V 33A 44mOhm 47.3nC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF500 |
Other |
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Negotiable |
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Vishay/Siliconix |
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Data Sheet |
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IRF510, SiHF510 |
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IRF510_R4941 |
Fairchild Semiconductor |
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IRF510A |
Fairchild Semiconductor |
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Data Sheet |
Negotiable |
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IRF510A_Q |
Fairchild Semiconductor |
MOSFET 100V .2 Ohm 33W |
Data Sheet |
Negotiable |
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