(China (Mainland))
Product Summary
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET? power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
Features
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
1.8V GATE RATED
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRLML6401TR |
|
MOSFET P-CH 12V 4.3A SOT-23 |
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRLML6401TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl |
Data Sheet |
|
|
||||||||||||
