M29W128GL70N6E

flash memory, 3V, 30A, TSOP

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Price:: US $2.29~2.30 / piece [Get Latest Price]

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	US $2.29~2.30

PartNumber:: M29W128GL70N6E

Brand:: Numonyx B.V - Numonyx | Pack: TSOP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2012-12-04

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Part Number:M29W128GL70N6E
US $2.29 - 2.30
MOC3063

US $0.32 - 1.50 / Piece
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2DI240A-055

US $70.00 - 100.00 / Piece
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Product Summary

The M29W128GL70N6E is a 3V supply flash memory. The M29W128GL70N6E is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.The end of a program or erase operation can be detected and any error conditions identified.

Parametrics

M29W128GL70N6E absolute maximum ratings: (1)temperature under bias: -50 to 125℃; (2)storage temperature: -65 to 150℃; (3)input or output voltage: -0.6 to VCC+0.6V; (4)identification voltage: -0.6 to 13.5V; (5)program voltage: -0.6 to 13.5.

Features

M29W128GL70N6E features: (1)Supply voltage, VCC = 2.7 to 3.6 V for Program, Erase and Read; (2)Asynchronous Random/Page Read: Page size: 8 words or 16 bytes, Page access: 25, 30 ns, Random access: 60 (only available upon customer request) or 70, 80 ns; (3)Fast Program commands, 32 words (64-byte write buffer); (4)Enhanced Buffered Program commands, 256 words; (5)Programming time.