Product Summary

The FDN302P is a P-channel 2.5V specified powerTrench MOSFET. It uses a rugged gate version of Fairchild’s advanced PowerTrench process. The FDN302P has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Its applications include Power management, Load switch, Battery protection.

Parametrics

FDN302P absolute maximum ratings: (1)drain-source voltage: -20V; (2)gate-source voltage: ±12V; (3)drain current-continuous: -2.4A; (4)drain current-pulsed: -10A; (5)maximum power dissipation: 0.5W; (6)operating and storage junction temperature range: -55 to 150℃.

Features

FDN302P features: (1)-20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V; (2)RDS(ON) = 0.080 Ω @ VGS = –2.5 V; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.

Diagrams

FDN302P diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDN302P
FDN302P

Fairchild Semiconductor

MOSFET SSOT-3 P-CH 2.5V

Data Sheet

0-1: $0.28
1-25: $0.23
25-100: $0.16
100-250: $0.15
FDN302P_Q
FDN302P_Q

Fairchild Semiconductor

MOSFET SSOT-3 P-CH 2.5V

Data Sheet

0-1: $0.12
1-25: $0.12
25-100: $0.11
100-250: $0.11